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introduction to comsol multiphysics version 4.2  (COMSOL Inc)

 
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    COMSOL Inc introduction to comsol multiphysics version 4.2
    Introduction To Comsol Multiphysics Version 4.2, supplied by COMSOL Inc, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
    https://www.bioz.com/product/introduction+to+comsol+multiphysics/comsol+multiphysics/pm34514773-349-22-21
    Average 90 stars, based on 1 article reviews
    introduction to comsol multiphysics version 4.2 - by Bioz Stars, 2026-10
    90/100 stars

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    Article Title: Contribution of inrush current to mechanical failure of power transformers windings
    Article Snippet: Master's thesis, Federal University of Rio de Janeiro, 2006 [24] COMSOL: ‘Introduction to COMSOL multiphysics’, 2015 [25] Beer, F.P., Dewolf, J.T.

    Article Title: A simple structure of all circular-air-holes photonic crystal fiber for achieving high birefringence and low confinement loss
    Article Snippet: A simple structure of all circular-air-holes photonic crystal fiber for achieving high birefringence and low confinement loss Yuan-Fong Chou Chau, Chee Ming Lim, Voo Nyuk Yoong, and Muhammad Nur Syafi'ie Idris Citation: J. Appl.. Phys.. 118, 243102 (2015); doi: 10.1063/1.4938152 View online: http://dx.doi.org/10.1063/1.4938152 View Table of Contents: http://aip.scitation.org/toc/jap/118/24 Published by the American Institute of Physics

    Article Title: The impact of mechanical stress on the degradation of AlGaN/GaN high electron mobility transistors
    Article Snippet: The impact of mechanical stress on the degradation of AlGaN/GaN high electron mobility transistors Sukwon Choi, Eric Heller, Donald Dorsey, Ramakrishna Vetury, and Samuel Graham Citation: Journal of Applied Physics 114, 164501 (2013); doi: 10.1063/1.4826524 View online: http://dx.doi.org/10.1063/1.4826524 View Table of Contents: http://scitation.aip.org/content/aip/journal/jap/114/16?ver=pdfcov Published by the AIP Publishing Articles you may be interested in Analysis of the residual stress distribution in AlGaN/GaN high electron mobility transistors J. Appl.. Phys.. 113, 093510 (2013); 10.1063/1.4794009 Modeling of the reverse gate leakage in AlGaN/GaN high electron mobility transistors J. Appl.

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    Article Snippet: [19] B. Sjodin andD.Kan, Introduction toCOMSOLMultiphysics, Version: COMSOL 5.2 (COMSOL AB, Sweden, 2015).



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